Moiré-Modulated $\mathrm{Γ}$ Valley in Twisted Bilayer and Twisted Double-Bilayer ${\mathrm{MoTe}}_{2}$
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直接通过角分辨光电子能谱和理论研究扭转双层及双双层MoTe2中的莫尔调制能带与晶格弛豫。
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Author(s): Wanying Chen, Hongyun Zhang, Jinxi Lu, Yu Gu, Qiyun Xu, Fei Wang, Xuanxi Cai, Jiansong Li, Jiayong Xiao, Rui Chen, Kenji Watanabe, Takashi Taniguchi, Jose Avila, Pavel Dudin, Matthew D. Watson, Pu Yu, Shengwei Jiang, Wenhui Duan, Tingxin Li, Chong Wang, and Shuyun Zhou Angle-Resolved Photoemission Spectroscopy measurements on twisted bilayer and double-bilayer MoTe₂, combined with theory, reveal remote electronic bands that follow twist-induced lattice relaxation, establishing a direct link between atomic reconstruction and electronic structure in moiré semiconductors. [Phys. Rev. Lett. 137, 116401] Published Wed Sep 09, 2026